v rrm = 1600 v - 2000 v i f =300 a features ? high surge capability do-9 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v 2. reverse polarity (r): stud is anode. S300Y thru s300zr maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon standard recover y diode conditions S300Y (r) 1600 1131 1600 ? types from 1600 v to 2000 v v rrm 2000 1414 2000 s300z (r) dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w 0.16 12 10 v r = 1600 v, t j = 175 c v a -55 to 150 6850 300 v r = 1600 v, t j = 25 c i f = 300 a, t j = 25 c t c 130 c conditions electrical characteristics, at tj = 25 c, unless otherwise specified t c = 25 c, t p = 8.3 ms surge non-repetitive forward current, half sine wave i f,sm i r v f 1600 300 6850 -55 to 150 0.16 2000 1.2 s300z (r) -55 to 150 -55 to 150 S300Y (r) 1.2 10 12 reverse current www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
S300Y thru s300zr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. S300Y thru s300zr do-9 (do--205ab) g d h i f b a e c inches millimeters min max min max a m 20 * p 1.5 b ----- 1.10 ----- 27.94 c 1.24 1.25 31.5 31.90 d 5.31 5.98 135 152 e 0.78 0.828 19.60 21.03 f 0.470 0.530 11.94 13.46 g ----- 1.122 ----- 28.5 h ----- 0.787 ----- 20.0 i 0.330 0.350 8.38 8.89 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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